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Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale

dc.contributor.authorBlasco, Xavier
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T00:47:00Z
dc.date.available2021-10-16T00:47:00Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10110
dc.sourceIIOimport
dc.titleComparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage719
dc.source.endpage721
dc.source.journalElectronics Letters
dc.source.issue12
dc.source.volume41
imec.availabilityPublished - imec


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