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Scaling effects in dual-bit split-gate nitride memory devices

dc.contributor.authorBreuil, Laurent
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorLorenzini, Martino
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-16T00:50:18Z
dc.date.available2021-10-16T00:50:18Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10152
dc.sourceIIOimport
dc.titleScaling effects in dual-bit split-gate nitride memory devices
dc.typeProceedings paper
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage227
dc.source.endpage230
dc.source.conferenceInternational Conference on Memory Technology and Designs
dc.source.conferencedate21/05/2005
dc.source.conferencelocationGiens France
imec.availabilityPublished - imec


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