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Write/erase degradation and disturb effects in source-side injection flash EEPROM devices

dc.contributor.authorWellekens, Dirk
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorFaraone, Lorenzo
dc.date.accessioned2021-09-29T13:25:57Z
dc.date.available2021-09-29T13:25:57Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1016
dc.sourceIIOimport
dc.titleWrite/erase degradation and disturb effects in source-side injection flash EEPROM devices
dc.typeJournal article
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage239
dc.source.endpage246
dc.source.journalQuality and Reliability Engineering International
dc.source.issue4
dc.source.volume11
imec.availabilityPublished - open access
imec.internalnotesESREF'94. Eur. Symp. on Reliability of Electron Devices, Failure Physics and Analysis. 4-7 Oct. 1994; Glasgow, UK


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