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The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs

dc.contributor.authorCamillo, L.M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T00:51:59Z
dc.date.available2021-10-16T00:51:59Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10171
dc.sourceIIOimport
dc.titleThe temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage119
dc.source.endpage124
dc.source.conferenceSilicon-on-Insulator Technology and Devices XII: Proceedings of the International Symposium
dc.source.conferencedate15/05/2005
dc.source.conferencelocationQuebec Canada
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2005-03


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