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Defect passivation in chemical vapour deposited fine-grained polycrystalline silicon by plasma hydrogenation

dc.contributor.authorCarnel, Lodewijk
dc.contributor.authorGordon, Ivan
dc.contributor.authorVan Nieuwenhuysen, Kris
dc.contributor.authorVan Gestel, Dries
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-16T00:53:46Z
dc.date.available2021-10-16T00:53:46Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10189
dc.sourceIIOimport
dc.titleDefect passivation in chemical vapour deposited fine-grained polycrystalline silicon by plasma hydrogenation
dc.typeJournal article
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage151
dc.source.journalThin Solid Films
dc.source.issue1_2
dc.source.volume487
imec.availabilityPublished - imec
imec.internalnotesPaper from the Int. Conf. on Polycrystalline Semiconductors- Materials, Technologies, Device Applications; Sept. 2004


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