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Non-selective and selective thin SiGe strain-relaxed buffer layers: growth and carbon-induced relaxation

dc.contributor.authorCaymax, Matty
dc.contributor.authorDelhougne, Romain
dc.contributor.authorRies, Michael
dc.contributor.authorLuysberg, Martina
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-16T00:54:51Z
dc.date.available2021-10-16T00:54:51Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10199
dc.sourceIIOimport
dc.titleNon-selective and selective thin SiGe strain-relaxed buffer layers: growth and carbon-induced relaxation
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.conference4th International conference on Silicon Epitaxy and Heterostructures - ICSI-4
dc.source.conferencedate23/05/2005
dc.source.conferencelocationHyogo Japan
imec.availabilityPublished - imec


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