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Crack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers

dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorBoeykens, Steven
dc.contributor.authorDerluyn, Joff
dc.contributor.authorGermain, Marianne
dc.contributor.authorEngelen, Jan
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T00:56:24Z
dc.date.available2021-10-16T00:56:24Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10213
dc.sourceIIOimport
dc.titleCrack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers
dc.typeOral presentation
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.conference11th European Workshop on MOVPE
dc.source.conferencedate5/06/2005
dc.source.conferencelocationLausanne Zwitserland
imec.availabilityPublished - imec


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