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Active dopant characterization methodology for Germanium

dc.contributor.authorClarysse, Trudo
dc.contributor.authorEyben, Pierre
dc.contributor.authorJanssens, Tom
dc.contributor.authorHoflijk, Ilse
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorSatta, Alessandra
dc.contributor.authorMeuris, Marc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T00:59:29Z
dc.date.available2021-10-16T00:59:29Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10239
dc.sourceIIOimport
dc.titleActive dopant characterization methodology for Germanium
dc.typeProceedings paper
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorHoflijk, Ilse
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage373
dc.source.endpage382
dc.source.conferenceProceedings of the 8th Int. Workshop on the Fabrication , Characterization and Modeling of Ultra Shallow Junctions in Semicond.
dc.source.conferencedate5/06/2005
dc.source.conferencelocationDaytona Beach, FL USA
imec.availabilityPublished - imec


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