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Performance improvement of tall triple gate devices with strained SiN layers

dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorRooyackers, Rita
dc.contributor.authorEneman, Geert
dc.contributor.authorGoodwin, Michael
dc.contributor.authorEyckens, Brenda
dc.contributor.authorSleeckx, Erik
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorAbsil, Philippe
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T01:00:25Z
dc.date.available2021-10-16T01:00:25Z
dc.date.issued2005-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10245
dc.sourceIIOimport
dc.titlePerformance improvement of tall triple gate devices with strained SiN layers
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.source.peerreviewno
dc.source.beginpage820
dc.source.endpage822
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume26
imec.availabilityPublished - imec


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