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HfSiO(N) composition depth profiling: can we get a quantitative answer using SIMS?

dc.contributor.authorConard, Thierry
dc.contributor.authorChen, Ping
dc.contributor.authorJanssens, Tom
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorMack, P.
dc.contributor.authorWeber, U.
dc.contributor.authorLehnen, P.
dc.date.accessioned2021-10-16T01:01:15Z
dc.date.available2021-10-16T01:01:15Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10251
dc.sourceIIOimport
dc.titleHfSiO(N) composition depth profiling: can we get a quantitative answer using SIMS?
dc.typeProceedings paper
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewno
dc.source.conferenceSIMS XV - 15th International Conference on Secondary Ion Mass Spectrometry
dc.source.conferencedate12/09/2005
dc.source.conferencelocationManchester UK
imec.availabilityPublished - imec


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