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A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics

dc.contributor.authorCrupi, Felice
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorPantisano, Luigi
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T01:03:23Z
dc.date.available2021-10-16T01:03:23Z
dc.date.issued2005-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10267
dc.sourceIIOimport
dc.titleA novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage1759
dc.source.endpage1765
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue8
dc.source.volume52
imec.availabilityPublished - imec


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