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Positive bias temperature instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

dc.contributor.authorCrupi, Felice
dc.contributor.authorPace, C.
dc.contributor.authorCocorullo, G.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-16T01:03:31Z
dc.date.available2021-10-16T01:03:31Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10268
dc.sourceIIOimport
dc.titlePositive bias temperature instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage130
dc.source.endpage133
dc.source.journalMicroelectronic Engineering
dc.source.volume80
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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