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Bias dependence of gate oxide degradation of 90 nm CMOS transistors under 60 MeV proton irradiation

dc.contributor.authorDavid, M-L.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMohammazadeh, A.
dc.date.accessioned2021-10-16T01:06:17Z
dc.date.available2021-10-16T01:06:17Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10288
dc.sourceIIOimport
dc.titleBias dependence of gate oxide degradation of 90 nm CMOS transistors under 60 MeV proton irradiation
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference8th European Conference on Radiation and Its Effects on Components and Systems - RADECS
dc.source.conferencedate19/09/2005
dc.source.conferencelocationCap d'Agde France
imec.availabilityPublished - imec


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