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The influence of dopants on the leakage current in PZT thin-film ferroelectric capacitors

dc.contributor.authorWouters, D. J.
dc.contributor.authorWillems, Geert
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorBrooks, K.
dc.contributor.authorKlissurska, R.
dc.date.accessioned2021-09-29T13:26:51Z
dc.date.available2021-09-29T13:26:51Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1028
dc.sourceIIOimport
dc.titleThe influence of dopants on the leakage current in PZT thin-film ferroelectric capacitors
dc.typeProceedings paper
dc.contributor.imecauthorWillems, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecWillems, Geert::0000-0002-9137-618X
dc.source.peerreviewno
dc.source.beginpage279
dc.source.endpage289
dc.source.conferenceScience and Technology of Electroceramic Thin Films. Proceedings of the NATO Advanced Research Workshop; 20-24 June 1994; Villa
dc.source.conferencelocation
imec.availabilityPublished - imec


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