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Measurement and statistical analysis of single trap current-voltage characteristics in ultrathin SiON

dc.contributor.authorDegraeve, Robin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKaczer, Ben
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T01:17:02Z
dc.date.available2021-10-16T01:17:02Z
dc.date.issued2005-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10357
dc.sourceIIOimport
dc.titleMeasurement and statistical analysis of single trap current-voltage characteristics in ultrathin SiON
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage360
dc.source.endpage365
dc.source.conference43rd Annual International Reliability Physics Symposium Proceedings
dc.source.conferencedate18/04/2005
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - imec


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