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Diffusion mechanism of hydrogen through PECVD SiNx:H for a fast defect passivation of mc-Si solar cells

dc.contributor.authorDekkers, Harold
dc.contributor.authorCarnel, Lodewijk
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorBeyer, W.
dc.date.accessioned2021-10-16T01:18:13Z
dc.date.available2021-10-16T01:18:13Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10364
dc.sourceIIOimport
dc.titleDiffusion mechanism of hydrogen through PECVD SiNx:H for a fast defect passivation of mc-Si solar cells
dc.typeProceedings paper
dc.contributor.imecauthorDekkers, Harold
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.source.peerreviewno
dc.source.beginpage721
dc.source.endpage724
dc.source.conferenceProceedings of the 20th European Photovoltaic Solar Energy Conference and Exhibition
dc.source.conferencedate6/06/2005
dc.source.conferencelocationBarcelona Spain
imec.availabilityPublished - imec


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