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Dry etch processing of Multiple Gate FETs with metal gate electrode

dc.contributor.authorDemand, Marc
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorShamiryan, Denis
dc.contributor.authorBeckx, Stephan
dc.contributor.authorBoullart, Werner
dc.contributor.authorVanhaelemeersch, Serge
dc.date.accessioned2021-10-16T01:18:48Z
dc.date.available2021-10-16T01:18:48Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10367
dc.sourceIIOimport
dc.titleDry etch processing of Multiple Gate FETs with metal gate electrode
dc.typeProceedings paper
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.conferenceDry Process Symposium
dc.source.conferencedate28/11/2005
dc.source.conferencelocationJeju Korea
imec.availabilityPublished - imec


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