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On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay

dc.contributor.authorZeng, A.
dc.contributor.authorJackson, K.
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDe Raedt, Walter
dc.date.accessioned2021-09-29T13:27:41Z
dc.date.available2021-09-29T13:27:41Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1038
dc.sourceIIOimport
dc.titleOn-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay
dc.typeJournal article
dc.contributor.imecauthorDe Raedt, Walter
dc.source.peerreviewno
dc.source.beginpage262
dc.source.endpage263
dc.source.journalAppl. Phys. Lett.
dc.source.volume67
imec.availabilityPublished - imec


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