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On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay
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On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay
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Date
1995
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zeng, A.
;
Jackson, K.
;
Van Hove, Marleen
;
De Raedt, Walter
Journal
Appl. Phys. Lett.
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1903
since deposited on 2021-09-29
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Acq. date: 2025-12-13
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Metrics
Views
1903
since deposited on 2021-09-29
1
last month
Acq. date: 2025-12-13
Citations