Publication:
On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay
Date
| dc.contributor.author | Zeng, A. | |
| dc.contributor.author | Jackson, K. | |
| dc.contributor.author | Van Hove, Marleen | |
| dc.contributor.author | De Raedt, Walter | |
| dc.contributor.imecauthor | De Raedt, Walter | |
| dc.date.accessioned | 2021-09-29T13:27:41Z | |
| dc.date.available | 2021-09-29T13:27:41Z | |
| dc.date.issued | 1995 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/1038 | |
| dc.source.beginpage | 262 | |
| dc.source.endpage | 263 | |
| dc.source.journal | Appl. Phys. Lett. | |
| dc.source.volume | 67 | |
| dc.title | On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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