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On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay
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On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay
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