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Towards optimally shaped fins in P-channel tri-gate FETs: Can fin height be reduced further?

dc.contributor.authorDixit, Abhisek
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorBrus, Stephan
dc.contributor.authorRichard, Olivier
dc.contributor.authorRooyackers, Rita
dc.contributor.authorGoodwin, Michael
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T01:23:53Z
dc.date.available2021-10-16T01:23:53Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10396
dc.sourceIIOimport
dc.titleTowards optimally shaped fins in P-channel tri-gate FETs: Can fin height be reduced further?
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage112
dc.source.endpage113
dc.source.conferenceProceedings IEEE VLSI-TSA International Symposium on VLSI Technology
dc.source.conferencedate25/04/2005
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - imec


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