Monolithically integrated coplanar stripline and InAlAs/InGaAs modulation-doped field-effect transistors with 4.2 ps switching time and 3.2 ps delay
dc.contributor.author | Zeng, A. | |
dc.contributor.author | Jackson, M. K. | |
dc.contributor.author | Van Hove, Marleen | |
dc.contributor.author | De Raedt, Walter | |
dc.date.accessioned | 2021-09-29T13:27:51Z | |
dc.date.available | 2021-09-29T13:27:51Z | |
dc.date.issued | 1995 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/1040 | |
dc.source | IIOimport | |
dc.title | Monolithically integrated coplanar stripline and InAlAs/InGaAs modulation-doped field-effect transistors with 4.2 ps switching time and 3.2 ps delay | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | De Raedt, Walter | |
dc.source.peerreview | no | |
dc.source.beginpage | 363 | |
dc.source.endpage | 4 | |
dc.source.conference | CLEO `95.Summaries of Papers Presented at the Conference on Lasers and Electro-Optics; 22-26 May 1995; Baltimore, MA, USA. | |
dc.source.conferencelocation | ||
imec.availability | Published - imec |
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