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Scalability of strained nitride capping layers for future CMOS generations

dc.contributor.authorEneman, Geert
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVerheyen, Peter
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T01:29:23Z
dc.date.available2021-10-16T01:29:23Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10426
dc.sourceIIOimport
dc.titleScalability of strained nitride capping layers for future CMOS generations
dc.typeProceedings paper
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.beginpage449
dc.source.endpage452
dc.source.conferenceProceedings of the 35th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate12/09/2005
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - imec


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