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Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors

dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDelhougne, Romain
dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorSimons, Veerle
dc.contributor.authorRoussel, Philippe
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLauwers, Anne
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T01:29:37Z
dc.date.available2021-10-16T01:29:37Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10427
dc.sourceIIOimport
dc.titleDefect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorSimons, Veerle
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSimons, Veerle::0000-0001-5714-955X
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpageS2197
dc.source.endpageS2210
dc.source.journalJournal of Physics: Condensed Matter
dc.source.issue22
dc.source.volume17
imec.availabilityPublished - imec
imec.internalnotesSpecial issue containing articles presented at the 1st Int. Workshop: Coordination Action on Defects Relevant to Engineering Silicon-Based Devices (Catania, Sept. 2004)


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