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SiON gate dielectric formation by rapid thermal oxidation of nitrided Si

dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorConard, Thierry
dc.contributor.authorSchaekers, Marc
dc.date.accessioned2021-10-16T01:32:10Z
dc.date.available2021-10-16T01:32:10Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10440
dc.sourceIIOimport
dc.titleSiON gate dielectric formation by rapid thermal oxidation of nitrided Si
dc.typeProceedings paper
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.source.peerreviewno
dc.source.beginpage135
dc.source.endpage138
dc.source.conference13th Annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP
dc.source.conferencedate4/10/2005
dc.source.conferencelocationSanta Barbara, CA USA
imec.availabilityPublished - imec


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