Show simple item record

Radiation induced transformation of impurity centers in the gate oxide of short channel SOI MOSFETs

dc.contributor.authorEvtukh, A.
dc.contributor.authorKizjak, A.
dc.contributor.authorLitovchenko, V.G.
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-16T01:32:32Z
dc.date.available2021-10-16T01:32:32Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10442
dc.sourceIIOimport
dc.titleRadiation induced transformation of impurity centers in the gate oxide of short channel SOI MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage469
dc.source.endpage476
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting
dc.source.conferencedate25/09/2005
dc.source.conferencelocationGiens France
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vols. 108-109


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record