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Study of recombination and transport characteristics in strain-relaxed Si-SiGe layers
Publication:
Study of recombination and transport characteristics in strain-relaxed Si-SiGe layers
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Date
2005
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Gaubas, Eugenijus
;
Tomasiunas, R.
;
Eneman, Geert
;
Delhougne, Romain
;
Simoen, Eddy
Journal
Semiconductor Science and Technology
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1834
since deposited on 2021-10-16
1
last month
Acq. date: 2026-02-25
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Statistics
Views
1834
since deposited on 2021-10-16
1
last month
Acq. date: 2026-02-25
Citations