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Study of recombination and transport characteristics in strain-relaxed Si-SiGe layers

dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorTomasiunas, R.
dc.contributor.authorEneman, Geert
dc.contributor.authorDelhougne, Romain
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-16T01:40:17Z
dc.date.available2021-10-16T01:40:17Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10481
dc.sourceIIOimport
dc.titleStudy of recombination and transport characteristics in strain-relaxed Si-SiGe layers
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1052
dc.source.endpage1063
dc.source.journalSemiconductor Science and Technology
dc.source.issue10
dc.source.volume20
imec.availabilityPublished - imec


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