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dc.contributor.authorGermain, Marianne
dc.contributor.authorFarvacque, Jean-Louis
dc.date.accessioned2021-10-16T01:42:53Z
dc.date.available2021-10-16T01:42:53Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10494
dc.sourceIIOimport
dc.titleThe intrinsic free carrier mobility in AlGaN/GaN quantum wells
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpageE8.6
dc.source.conferenceGaN, AlN, InN and Their Alloys
dc.source.conferencedate28/11/2004
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 831


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