Show simple item record

The enhanced degradation of MOSFETs damaged by hot holes

dc.contributor.authorAl-Kofahi, I. S.
dc.contributor.authorZhang, Jenny
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-09-29T14:15:55Z
dc.date.available2021-09-29T14:15:55Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1051
dc.sourceIIOimport
dc.titleThe enhanced degradation of MOSFETs damaged by hot holes
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage711
dc.source.endpage721
dc.source.conferenceProceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the SiO2 Interface; May 5-10, 1996. Lo
dc.source.conferencelocation
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record