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Deposition of 60nm thin Sr0.8Bi2.2Ta2O9 layers for application in scaled 1T1C and 1T FeRAM devices

dc.contributor.authorGoux, Ludovic
dc.contributor.authorXu, Zhen
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-16T01:48:55Z
dc.date.available2021-10-16T01:48:55Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10521
dc.sourceIIOimport
dc.titleDeposition of 60nm thin Sr0.8Bi2.2Ta2O9 layers for application in scaled 1T1C and 1T FeRAM devices
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage162
dc.source.endpage165
dc.source.journalMicroelectronic Engineering
dc.source.volume80C
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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