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On the hot-hole induced post-stress interface trap generation in MOSFETs

dc.contributor.authorAl-Kofahi, I. S.
dc.contributor.authorZhang, Jenny
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-09-29T14:15:56Z
dc.date.available2021-09-29T14:15:56Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1052
dc.sourceIIOimport
dc.titleOn the hot-hole induced post-stress interface trap generation in MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage305
dc.source.endpage310
dc.source.conference1996 International Reliability Physics Proceedings ; April 29 - May 2, 1996. Dallas, Texas, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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