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Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

dc.contributor.authorGuhel, Y.
dc.contributor.authorBoudart, B.
dc.contributor.authorVellas, N.
dc.contributor.authorGaquiere, C.
dc.contributor.authorDelos, E.
dc.contributor.authorDucatteau, D.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorGermain, Marianne
dc.date.accessioned2021-10-16T01:51:36Z
dc.date.available2021-10-16T01:51:36Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10534
dc.sourceIIOimport
dc.titleImpact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage1589
dc.source.endpage1594
dc.source.journalSolid-State Electronics
dc.source.issue10
dc.source.volume19
imec.availabilityPublished - imec


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