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Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorRafi, J.M.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T01:55:41Z
dc.date.available2021-10-16T01:55:41Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10552
dc.sourceIIOimport
dc.titleDifference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference8th European Conference on Radiation and Its Effects on Components and Systems - RADECS
dc.source.conferencedate19/09/2005
dc.source.conferencelocationCap d'Agde France
imec.availabilityPublished - imec


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