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Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs

dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, T.
dc.contributor.authorOhyama, H.
dc.contributor.authorKuboyama, S.
dc.contributor.authorMatsuda, S.
dc.contributor.authorRafi, J.M.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T01:56:10Z
dc.date.available2021-10-16T01:56:10Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10554
dc.sourceIIOimport
dc.titleRadiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1376
dc.source.endpage1381
dc.source.journalMicroelectronics Reliability
dc.source.issue9_11
dc.source.volume45
imec.availabilityPublished - imec
imec.internalnotesPaper from the 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Oct. 2005, Bordeaux


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