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VPD-DC-TXRF for metallic contamination analysis of Ge wafers

dc.contributor.authorHellin, David
dc.contributor.authorGeens, V.
dc.contributor.authorTeerlinck, Ivo
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorRip, Jens
dc.contributor.authorLaureyn, Wim
dc.contributor.authorRaskin, Geoffroy
dc.contributor.authorMertens, Paul
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorVinckier, Chris
dc.date.accessioned2021-10-16T01:58:22Z
dc.date.available2021-10-16T01:58:22Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10564
dc.sourceIIOimport
dc.titleVPD-DC-TXRF for metallic contamination analysis of Ge wafers
dc.typeProceedings paper
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage213
dc.source.endpage216
dc.source.conferenceUltra Clean Processing of Silicon Surfaces VII: Proceedings of the 7th International Symposium
dc.source.conferencedate20/09/2004
dc.source.conferencelocationBrussel Belgium
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol 103-104


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