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Defect generation in high-k gate dielectric stacks under electrical stress: the impact of hydrogen

dc.contributor.authorHoussa, Michel
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorStesmans, Andre
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T02:11:42Z
dc.date.available2021-10-16T02:11:42Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10617
dc.sourceIIOimport
dc.titleDefect generation in high-k gate dielectric stacks under electrical stress: the impact of hydrogen
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewno
dc.source.beginpageS2075
dc.source.endpageS2088
dc.source.journalJournal of Physics: Condensed Matter
dc.source.issue21
dc.source.volume17
imec.availabilityPublished - imec


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