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DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

dc.contributor.authorHuang, Y.L.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorJob, R.
dc.contributor.authorMa, Y.
dc.contributor.authorDüngen, W.
dc.contributor.authorFahrner, W.R.
dc.contributor.authorVersluys, J.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-16T02:12:44Z
dc.date.available2021-10-16T02:12:44Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10621
dc.sourceIIOimport
dc.titleDLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage547
dc.source.endpage552
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting
dc.source.conferencedate25/09/2005
dc.source.conferencelocationGiens France
imec.availabilityPublished - imec
imec.internalnotesSolid-State Phenomena; Vol 108-109


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