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Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

dc.contributor.authorKaczer, Ben
dc.contributor.authorArkhipov, Vladimir
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T02:24:53Z
dc.date.available2021-10-16T02:24:53Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10669
dc.sourceIIOimport
dc.titleNegative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage122
dc.source.endpage125
dc.source.journalMicroelectronic Engineering
dc.source.volume80
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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