Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

Publication:

2005-06

Journal article

Author(s)

;

Arkhipov, Vladimir

;

;

Microelectronic Engineering

1832 since deposited on 2021-10-16

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Acq. date: 2025-12-16