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Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process

dc.contributor.authorKang, JinFeng
dc.contributor.authorYu, HongYu
dc.contributor.authorRen, C.
dc.contributor.authorWang, X.P.
dc.contributor.authorLi, M.F.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorSa, N.
dc.contributor.authorYang, H.
dc.contributor.authorLiu, X.Y.
dc.contributor.authorHan, R.Q.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2021-10-16T02:26:28Z
dc.date.available2021-10-16T02:26:28Z
dc.date.issued2005-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10675
dc.sourceIIOimport
dc.titleImproved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage237
dc.source.endpage239
dc.source.journalIEEE Electron Device Letters
dc.source.issue26
dc.source.volume4
imec.availabilityPublished - imec


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