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Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process
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1912 since deposited on 2021-10-16
Acq. date: 2025-10-23
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Views
1912 since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations