Authors

Kang, JinFeng; Yu, HongYu; Ren, C.; Wang, X.P.; Li, M.F.; Chan, D.S.H.; Yeo, Y.C.; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.L.

Issue

26

Journal

IEEE Electron Device Letters

Volume

4

Title

Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process

Publication type

Journal article