Publication:

Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process

Date

2005
Journal article
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Author(s)

Kang, JinFeng
;
Yu, HongYu
;
Ren, C.
;
Wang, X.P.
;
Li, M.F.
;
Chan, D.S.H.
;
Yeo, Y.C.
;
Sa, N.
;
Yang, H.
;
Liu, X.Y.
;
Han, R.Q.
;
Kwong, D.L.

Journal

IEEE Electron Device Letters

Abstract

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