Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process

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Author(s)

Kang, JinFeng

;

Yu, HongYu

;

Ren, C.

;

Wang, X.P.

;

Li, M.F.

;

Chan, D.S.H.

;

Yeo, Y.C.

;

Sa, N.

;

Yang, H.

;

Liu, X.Y.

;

Han, R.Q.

;

Kwong, D.L.

Journal

IEEE Electron Device Letters

Metrics

1916 since deposited on 2021-10-16

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Acq. date: 2025-12-08