Publication:
Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process
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1918 since deposited on 2021-10-16
2last month
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Acq. date: 2026-04-07
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Statistics
Views
1918 since deposited on 2021-10-16
2last month
1last week
Acq. date: 2026-04-07
Citations