Publication:
Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process
Date
| dc.contributor.author | Kang, JinFeng | |
| dc.contributor.author | Yu, HongYu | |
| dc.contributor.author | Ren, C. | |
| dc.contributor.author | Wang, X.P. | |
| dc.contributor.author | Li, M.F. | |
| dc.contributor.author | Chan, D.S.H. | |
| dc.contributor.author | Yeo, Y.C. | |
| dc.contributor.author | Sa, N. | |
| dc.contributor.author | Yang, H. | |
| dc.contributor.author | Liu, X.Y. | |
| dc.contributor.author | Han, R.Q. | |
| dc.contributor.author | Kwong, D.L. | |
| dc.date.accessioned | 2021-10-16T02:26:28Z | |
| dc.date.available | 2021-10-16T02:26:28Z | |
| dc.date.issued | 2005-04 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10675 | |
| dc.source.beginpage | 237 | |
| dc.source.endpage | 239 | |
| dc.source.issue | 26 | |
| dc.source.journal | IEEE Electron Device Letters | |
| dc.source.volume | 4 | |
| dc.title | Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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