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Observation and characterization of defects in HfO2 high-k gate dielectric layers

dc.contributor.authorKaushik, Vidya
dc.contributor.authorClaes, Martine
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorRichard, Olivier
dc.contributor.authorRohr, Erika
dc.contributor.authorWitters, Thomas
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T02:28:34Z
dc.date.available2021-10-16T02:28:34Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10683
dc.sourceIIOimport
dc.titleObservation and characterization of defects in HfO2 high-k gate dielectric layers
dc.typeJournal article
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage798
dc.source.endpage801
dc.source.journalMicroelectronics Reliability
dc.source.issue5_6
dc.source.volume45
imec.availabilityPublished - imec
imec.internalnotes13th Workshop on Dielectrics in Microelectronics


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