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Ni fully silicided gates for 45 nm CMOS applications

dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorVan Dal, Mark
dc.contributor.authorVeloso, Anabela
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorSchram, Tom
dc.contributor.authorBrijs, Bert
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorVrancken, Christa
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-16T02:33:30Z
dc.date.available2021-10-16T02:33:30Z
dc.date.issued2005-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10701
dc.sourceIIOimport
dc.titleNi fully silicided gates for 45 nm CMOS applications
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage441
dc.source.endpage448
dc.source.journalMicroelectronic Engineering
dc.source.issue82
imec.availabilityPublished - open access
imec.internalnotespresented at the International Conference on Materials for Advanced Metallization; March 2005; Dresden, Germany


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