dc.contributor.author | Kittl, Jorge | |
dc.contributor.author | Lauwers, Anne | |
dc.contributor.author | Kmieciak, Malgorzata | |
dc.contributor.author | Van Dal, Mark | |
dc.contributor.author | Veloso, Anabela | |
dc.contributor.author | Kottantharayil, Anil | |
dc.contributor.author | Pourtois, Geoffrey | |
dc.contributor.author | Demeurisse, Caroline | |
dc.contributor.author | Schram, Tom | |
dc.contributor.author | Brijs, Bert | |
dc.contributor.author | de Potter de ten Broeck, Muriel | |
dc.contributor.author | Vrancken, Christa | |
dc.contributor.author | Maex, Karen | |
dc.date.accessioned | 2021-10-16T02:33:30Z | |
dc.date.available | 2021-10-16T02:33:30Z | |
dc.date.issued | 2005-08 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10701 | |
dc.source | IIOimport | |
dc.title | Ni fully silicided gates for 45 nm CMOS applications | |
dc.type | Journal article | |
dc.contributor.imecauthor | Lauwers, Anne | |
dc.contributor.imecauthor | Van Dal, Mark | |
dc.contributor.imecauthor | Veloso, Anabela | |
dc.contributor.imecauthor | Pourtois, Geoffrey | |
dc.contributor.imecauthor | Demeurisse, Caroline | |
dc.contributor.imecauthor | Schram, Tom | |
dc.contributor.imecauthor | de Potter de ten Broeck, Muriel | |
dc.contributor.imecauthor | Vrancken, Christa | |
dc.contributor.imecauthor | Maex, Karen | |
dc.contributor.orcidimec | Pourtois, Geoffrey::0000-0003-2597-8534 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 441 | |
dc.source.endpage | 448 | |
dc.source.journal | Microelectronic Engineering | |
dc.source.issue | 82 | |
imec.availability | Published - open access | |
imec.internalnotes | presented at the International Conference on Materials for Advanced Metallization; March 2005; Dresden, Germany | |