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Mechanisms of arsenic segregation to the Ni2Si/SiO2 interface during Ni2Si formation

dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorJanssens, Tom
dc.contributor.authorLauwers, Anne
dc.contributor.authorVantomme, Andre
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMaex, Karen
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-16T02:34:52Z
dc.date.available2021-10-16T02:34:52Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10706
dc.sourceIIOimport
dc.titleMechanisms of arsenic segregation to the Ni2Si/SiO2 interface during Ni2Si formation
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage181910-1
dc.source.endpage181910-3
dc.source.journalApplied Physics Letters
dc.source.issue18
dc.source.volume87
imec.availabilityPublished - imec


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