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The kinetics and mechanism of the etching of CoSi2 in HF-based solutions

dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorBadmaeva, I. A.
dc.contributor.authorAlves Donaton, Ricardo
dc.contributor.authorSveshnikova, L. L.
dc.contributor.authorStorm, Wolfgang
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-09-29T14:16:26Z
dc.date.available2021-09-29T14:16:26Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1071
dc.sourceIIOimport
dc.titleThe kinetics and mechanism of the etching of CoSi2 in HF-based solutions
dc.typeJournal article
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage3245
dc.source.endpage3251
dc.source.journalJournal of the Electrochemical Society
dc.source.issue10
dc.source.volume143
imec.availabilityPublished - open access


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