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Selective removal of Ni for salicidation and fully silicided gates

dc.contributor.authorKraus, K.
dc.contributor.authorFano Leston, V.
dc.contributor.authorSnow, Jim
dc.contributor.authorXu, Kaidong
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorLauwers, Anne
dc.contributor.authorMertens, Paul
dc.contributor.authorKovacs, F.
dc.date.accessioned2021-10-16T02:39:39Z
dc.date.available2021-10-16T02:39:39Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10724
dc.sourceIIOimport
dc.titleSelective removal of Ni for salicidation and fully silicided gates
dc.typeProceedings paper
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorMertens, Paul
dc.source.peerreviewno
dc.source.beginpage67
dc.source.endpage74
dc.source.conferenceCleaning Technology in Semiconductor Device Manufacturing IX
dc.source.conferencedate16/10/2005
dc.source.conferencelocationLos Angeles, CA USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol 1, nr 3


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